transistor output the mocd211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. it is ideally suited for high density applications and eliminates the need for throughtheboard mounting. ? dual channel coupler ? convenient plastic soic8 surface mountable package style ? minimum v (br)ceo of 30 volts guaranteed ? standard soic8 footprint, with 0.050 lead spacing ? c o m patible with dual wave, vapor phase and ir reflow soldering ? h igh input?output isolation of 3000 vac (rms) guaranteed ? m eets u.l. regulatory requirements, file #e 90 70 0 , v olume 2 ordering information: ? to obtain mocd211 in tape and reel, add r2 suffix to device number as follows: r2 = 2500 units on 13 reel ? to obtain mocd211 in quantities of 50 (shipped in sleeves) e no suffix marking information: ? mocd211 = d211 maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit input led forward current e continuous i f 60 ma forward current e peak (pw = 100 m s, 120 pps) i f (pk) 1.0 a reverse voltage v r 6.0 v led power dissipation @ t a = 25 c derate above 25 c p d 90 0.8 mw mw/ c output transistor collectoremitter voltage v ceo 30 v collectorbase voltage v cbo 70 v emittercollector voltage v eco 7.0 v collector current e continuous i c 150 ma detector power dissipation @ t a = 25 c derate above 25 c p d 150 1.76 mw mw/ c dual channel small outline optoisolator transistor output schematic 1. anode 1 2. cathode 1 3. anode 2 4. cathode 2 5. emitter 2 6. collector 2 7. emitter 1 8. collector 1 1 2 3 8 6 5 4 7
maximum ratings e continued (t a = 25 c unless otherwise noted) rating symbol value unit total device inputoutput isolation voltage (1,2) (60 hz, 1.0 sec. duration) v iso 3000 vac(rms) total device power dissipation @ t a = 25 c derate above 25 c p d 250 2.94 mw mw/ c ambient operating temperature range (3) t a 45 to +100 c storage temperature range (3) t stg 45 to +125 c lead soldering temperature (1/16 from case, 10 sec. duration) e 260 c electrical characteristics (t a = 25 c unless otherwise noted) (4) characteristic symbol min typ (4) max unit input led forward voltage (i f = 1.0 ma) v f e 1.15 1.5 v reverse leakage current (v r = 6.0 v) i r e 0.1 100 a capacitance c e 18 e pf output transistor collectoremitter dark current (v ce = 5.0 v, t a = 25 c) i ceo 1 e 1.0 50 na (v ce = 5.0 v, t a = 100 c) i ceo 2 e 1.0 e m a collectoremitter breakdown voltage (i c = 100 m a) v (br)ceo 30 90 e v emittercollector breakdown voltage (i e = 100 m a) v (br)eco 7.0 7.8 e v collectoremitter capacitance (f = 1.0 mhz, v ce = 0) c ce e 7.0 e pf coupled output collector current mocd211 (i f = 10 ma, v ce = 10 v) i c (ctr) (5) 2.0 (20) 6.5 (65) e ma (%) collectoremitter saturation voltage (i c = 2.0 ma, i f = 1.0 ma) v ce(sat) e 0.15 0.4 v turnon time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t on e 7.5 e m s turnoff time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t off e 5.7 e m s rise time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t r e 3.2 e m s fall time (i c = 2.0 ma, v cc = 10 v, r l = 100 w ) t f e 4.7 e m s inputoutput isolation voltage (f = 60 hz, t = 1.0 sec.) (1,2) v iso 3000 e e vac(rms) isolation resistance (v io = 500 v) (2) r iso 10 11 e e w isolation capacitance (v io = 0, f = 1.0 mhz) (2) c iso e 0.2 e pf 1. inputoutput isolation voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1, 2, 3 and 4 are common, and pins 5, 6, 7 and 8 are common. 3. refer to quality and reliability section in opto data book for information on test conditions. 4. always design to the specified minimum/maximum electrical limits (where applicable). 5. current transfer ratio (ctr) = i c /i f x 100%. mo cd211
figure 1. led forward voltage versus forward current i f , led forward current (ma) 101 2 1000100 1 1.2 1.4 1.6 1.8 figure 2. output current versus input current v f , forward voltage (volts) pulse only pulse or dc typical characteristics t a = 45 c 25 c 100 c c i f , led input current (ma) 5020105210.5 0.1 1 10 0.01 i , output collector current (normalized) normalized to: i f = 10 ma 1001010.10.01 20 t a , ambient temperature ( c) 120100806040200204060 0.1 1 10 figure 3. output current versus collectoremitter voltage 18 16 14 12 10 8 6 4 v, voltage (volts) 2 i c , output collector current (normalized ) c, capacitance (pf) 1 10 100 0.1 0 2 0 4 0 6 0 8 0 100 t a , ambient temperature ( c) i ceo , collectoremitter dark current (normalized) figure 4. output current versus ambient temperature figure 5. dark current versus ambient temperature figure 6. capacitance versus voltage v ce , collectoremitter voltage (volts) 1098 01 2 3 4 5 6 16 7 0 2 4 6 8 10 12 14 i c , output collector current (ma) i f = 10 ma mocd211 normalized to: t a = 25 c normalized to: v ce = 10 v t a = 25 c v ce = 30 v 10 v c led c ce f = 1 mhz mo cd211
style 3: pin 1. anode 1 2. cathode 1 3. anode 2 4. cathode 2 5. emitter 2 6. collector 2 7. emitter 1 8. collector 1 dim a min max min max millimeters 0.182 0.202 4.63 5.13 inches b 0.144 0.164 3.66 4.16 c 0.123 0.143 3.13 3.63 d 0.011 0.021 0.28 0.53 g 0.050 bsc 1.27 bsc h 0.003 0.008 0.08 0.20 j 0.006 0.010 0.16 0.25 k 0.224 0.244 5.69 6.19 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b k d g 8 pl 0.13 (0.005) m ta m j h c seating plane 0.038 (0.0015) 1 85 4 a - t- mo cd211
life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. www.fairchildsemi.com ? 2000 fairchild semiconductor corporation
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